SEOUL, South Korea / RankWire.AI / – Samsung Electronics has introduced innovative memory and storage technology plans aimed at enhancing artificial intelligence infrastructure capabilities. The company announced these initiatives at the 2026 OCP Global Summit in San Jose, California, which took place from October 12 to 15. The roadmap emphasizes high-performance memory, memory expansion via Compute Express Link, and next-generation solid-state drives. Additionally, Samsung will collaborate with AMD on a joint CXL demonstration. These plans seek to address current AI server capacity limitations.
Samsung outlined its strategy through three primary objectives: increasing speed, improving memory scalability, and ensuring data persistence. To boost speed, the company showcased customized high-bandwidth memory alongside the eighth-generation HBM5. For scalability, it promoted CXL as a means to expand capacity beyond what is available within individual servers. Concerning persistence, Samsung introduced advanced SSD-based data storage and management solutions. The company also presented software designed to enhance data processing efficiency in AI applications.
According to Samsung, the rising deployment of AI agents is increasing the demand for more memory during inference processes. As larger models produce more data while generating responses, that data must remain accessible to processors. Traditional systems restrict the amount of memory each processor can access. Samsung proposed CXL technology as an effective approach to overcoming this limitation. The company also showcased key-value cache optimization, which enables AI models to reuse previously processed data instead of repeating calculations.
Partnership with AMD Extends to CXL Memory Expansion
Samsung and AMD will jointly demonstrate a CXL-based solution designed to increase memory capacity in AI systems. This technology allows processors to share memory resources instead of relying solely on local server memory. Samsung reports that engineers have validated the solution in real system environments. The demonstration builds upon a memorandum of understanding signed by both companies in March 2026 for next-generation AI memory and computing. On October 7, AMD CEO Lisa Su visited Korea and met with Jeon Young-hyun, Vice Chairman of Samsung’s Device Solutions division.
Memory pooling was another key feature showcased by Samsung. The company demonstrated CMM-D, a CXL-based DRAM module that connects multiple memory units into a shared pool. This allows systems to draw capacity from the pool as workload demands increase. Samsung also displayed processing-in-memory technology, which performs certain calculations within memory chips to reduce data movement and conserve energy. Exhibits included 2-nanometer gate-all-around wafers, Groq LPU wafers, and Nvidia’s Groq 3 LPX system.
Early Co-Design Efforts Inform Samsung’s AI Memory Development Roadmap
Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, shared details of the company’s plans during an executive session. He emphasized that the increasing size of AI models and higher inference demands make expanded memory capacity and bandwidth crucial for optimal system performance. Shim also highlighted Samsung’s efforts to deepen co-design and technical validation collaborations with global partners from the earliest phases of development. The goal is to align memory and storage products more precisely with customer system designs.
Samsung MAX Lab provides customers with a platform to evaluate memory and storage solutions under real-world AI workloads. It also offers co-design services tailored to specific system configurations. Customers can test pre-commercial technologies, including PIM and next-generation SSDs, before market release. Samsung participated in the summit as a Diamond Sponsor. This event follows its appearances in 2026 at Nvidia GTC, COMPUTEX, and the Future of Memory and Storage conference, as the company continues to expand its presence in AI memory innovations.